ZXMN6A25K Datasheet. Specs and Replacement

Type Designator: ZXMN6A25K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9.85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1063 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO252 DPAK

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ZXMN6A25K datasheet

 ..1. Size:807K  diodes
 zxmn6a25k.pdf pdf_icon

ZXMN6A25K

ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.050 @ VGS= 10V 10.7 60 0.070 @ VGS= 4.5V 9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistance ... See More ⇒

 0.1. Size:805K  zetex
 zxmn6a25ktc.pdf pdf_icon

ZXMN6A25K

ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.050 @ VGS= 10V 10.7 60 0.070 @ VGS= 4.5V 9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistance ... See More ⇒

 6.1. Size:659K  diodes
 zxmn6a25g.pdf pdf_icon

ZXMN6A25K

ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 6.7 60 0.070 @ VGS = 4.5V 5.7 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r... See More ⇒

 6.2. Size:721K  diodes
 zxmn6a25dn8.pdf pdf_icon

ZXMN6A25K

ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 5 60 0.070 @ VGS = 4.5V 4.2 Description D1 D2 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. G1 G2 Features S1 S2 ... See More ⇒

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Detailed specifications: ZXMN6A09DN8, ZXMN6A09G, ZXMN6A09K, ZXMN6A11DN8, ZXMN6A11G, ZXMN6A11Z, ZXMN6A25DN8, ZXMN6A25G, 4N60, ZXMN6A25N8, ZXMN7A11G, ZXMN7A11K, BSS123Z, BSS123W, ZVN4424Z, ZVN4525E6, ZVN4525G

Keywords - ZXMN6A25K MOSFET specs

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