AP6802 Datasheet. Specs and Replacement

Type Designator: AP6802  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23-6L

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AP6802 datasheet

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AP6802

AP6800GEO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 20m G1 S1 Optimal DC/DC battery application S1 ID 6 TSSOP-8 D1 RoHS compliant Description D1 D2 The Advanced Power M... See More ⇒

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AP6802

AP6800EY Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET S2 Simple Drive Requirement BVDSS 60V G2 D1 Smaller Outline Package RDS(ON) 2 D2 Surface mount package ID3 260mA G1 SOT-26 S1 RoHS Compliant & Halogen-Free D1 D2 Description G1 G2 AP6800 series are from Advanced Power innovated design and silicon proce... See More ⇒

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AP6802

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Detailed specifications: AP5N20K, AP5N50K, AP6007S, AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, IRFZ24N, AP6900, AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T

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