AP6900 Datasheet. Specs and Replacement
Type Designator: AP6900 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT23-6L
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AP6900 substitution
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AP6900 datasheet
ap6900gsm-hf.pdf
AP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 30m G1 Fast Switching Performance ID 5.7A S2/A RoHS Compliant CH-2 BVDSS 30V G2 D1 D1 SO-8 RDS(ON) 22m Description ID 9.8A Advanced Power MOSFETs from APEC p... See More ⇒
ap6900gh-hf.pdf
AP6900GH-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement CH-1 BVDSS 30V Fast Switching Performance RDS(ON) 6.2m Two Independent Device ID 72A Halogen Free & RoHS Compliant Product CH-2 BVDSS 30V RDS(ON) 10m Description ID 45A Advanced Power MOSFETs from APEC provide the D1 (TAB1) designer with ... See More ⇒
ap6900gsm.pdf
AP6900GSM Pb Free Plating Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 30m G1 Fast Switching Performance ID 5.7A S2/A CH-2 BVDSS 30V G2 D1 SO-8 RDS(ON) 22m D1 Description ID 9.8A The Advanced Power MOSFETs from APEC provide the D1 ... See More ⇒
Detailed specifications: AP5N50K, AP6007S, AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, AP6802, 2N60, AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T, AP80P04K
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