AOTF950A70L PDF and Equivalents Search

 ..1. Size:767K  aosemi
 aotf950a70l.pdf

AOTF950A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:528K  aosemi
 aotf9n70.pdf

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:295K  aosemi
 aotf9n90.pdf

AOTF9N90 900V, 9A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF9N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 9A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒

 9.4. Size:159K  aosemi
 aotf9n50.pdf

AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT9N50 & AOTF9N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

 9.5. Size:252K  inchange semiconductor
 aotf9n70.pdf

isc N-Channel MOSFET Transistor AOTF9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

 9.6. Size:252K  inchange semiconductor
 aotf9n70l.pdf

isc N-Channel MOSFET Transistor AOTF9N70L FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 9.7. Size:251K  inchange semiconductor
 aotf9n90.pdf

isc N-Channel MOSFET Transistor AOTF9N90 FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 9.8. Size:252K  inchange semiconductor
 aotf9n50.pdf

isc N-Channel MOSFET Transistor AOTF9N50 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒