ADG120N080G2 PDF and Equivalents Search

 

ADG120N080G2 Specs and Replacement

Type Designator: ADG120N080G2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-263-7L

ADG120N080G2 substitution

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ADG120N080G2 datasheet

 ..1. Size:1184K  cn anhi
 adq120n080g2 adw120n080g2 adg120n080g2.pdf pdf_icon

ADG120N080G2

ADQ120N080G2, ADW120N080G2, ADG120N080G2 1200V N-Channel Silicon Carbide Power MOSFET 1. Applications Asymmetrical Bridge Converter Inverter Single Switch Forward Flyback 2. Features Low drain-source on-resistance RDS(ON) = 80m (typ.) Easy to control Gate switching Enhancement mode Vth = 2 to 4 V Table 1 Key Performance Parameters Parameter Value Unit V 1200 V ... See More ⇒

Detailed specifications: AOSN21319C , AOSS62934 , AON5802 , 2N7002KH , 2N7002KM , AS2310A , 2N7002EY , AS6004 , 2N60 , ADQ120N080G2 , ADW120N080G2 , ASA50R130E , ASA60R090EFD , ASA60R090EFDA , ASA60R150E , , .

History: ADQ120N080G2

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