ASD80R750E Specs and Replacement
Type Designator: ASD80R750E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34.8 nS
Cossⓘ - Output Capacitance: 34.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO252
ASD80R750E substitution
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ASD80R750E datasheet
asa80r750e asd80r750e asb80r750e.pdf
ASA80R750E, ASD80R750E, ASB80R750E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 620m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Val... See More ⇒
Detailed specifications: ASD65R280E, ASD65R300E, ASD65R350E, ASD65R550E, ASD65R850E, ASD70R380E, ASD70R600E, ASD70R950E, IRFB4227
Keywords - ASD80R750E MOSFET specs
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ASD80R750E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E
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