All MOSFET. ZXMN10A08E6 Datasheet

 

ZXMN10A08E6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN10A08E6
   Marking Code: 10A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Qgⓘ - Total Gate Charge: 4.2 nC
   Cossⓘ - Output Capacitance: 405 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT26

 ZXMN10A08E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN10A08E6 Datasheet (PDF)

 ..1. Size:234K  diodes
 zxmn10a08e6.pdf

ZXMN10A08E6 ZXMN10A08E6

A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6

 0.1. Size:174K  diodes
 zxmn10a08e6ta zxmn10a08e6tc.pdf

ZXMN10A08E6 ZXMN10A08E6

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

 5.1. Size:179K  diodes
 zxmn10a08dn8.pdf

ZXMN10A08E6 ZXMN10A08E6

ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc

 5.2. Size:441K  diodes
 zxmn10a08g.pdf

ZXMN10A08E6 ZXMN10A08E6

ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

 5.3. Size:1582K  kexin
 zxmn10a08g.pdf

ZXMN10A08E6 ZXMN10A08E6

SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top