ZXMN10A08G PDF and Equivalents Search

 

ZXMN10A08G Specs and Replacement

Type Designator: ZXMN10A08G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT223

ZXMN10A08G substitution

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ZXMN10A08G datasheet

 ..1. Size:441K  diodes
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ZXMN10A08G

ZXMN10A08G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.9 100 0.300 @ VGS= 6V 2.6 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r... See More ⇒

 ..2. Size:1582K  kexin
zxmn10a08g.pdf pdf_icon

ZXMN10A08G

SMD Type MOSFET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V) 1 2 3 D RDS(ON) 300m (VGS = 6V) 0.250 2.30 (typ) Gauge Plane 1.Gate G 2.Drain 0.70 0.1 3.Source S 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

 5.1. Size:174K  diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf pdf_icon

ZXMN10A08G

A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25 C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t... See More ⇒

 5.2. Size:234K  diodes
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ZXMN10A08G

A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9A Mechanical Data Case SOT23-6 ... See More ⇒

Detailed specifications: ZVN4525G, ZVN4525Z, ZVNL120G, ZXMN0545G4, ZXMN10A07F, ZXMN10A07Z, ZXMN10A08DN8, ZXMN10A08E6, IRFZ48N, ZXMN10A09K, ZXMN10A11G, ZXMN10A11K, ZXMN10A25G, ZXMN10A25K, ZXMN10B08E6, ZXMN15A27K, ZXMN20B28K

Keywords - ZXMN10A08G MOSFET specs

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