AUA056N08BGL PDF and Equivalents Search

 

AUA056N08BGL Specs and Replacement

Type Designator: AUA056N08BGL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 1215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: TO220F

AUA056N08BGL substitution

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AUA056N08BGL datasheet

 ..1. Size:962K  cn anhi
 aup056n08bgl aud056n08bgl aun050n08bgl aua056n08bgl aub056n08bgl.pdf pdf_icon

AUA056N08BGL

AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, AUB056N08BGL MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 4.9m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to 2.5 V Table 1 Key Pe... See More ⇒

Detailed specifications: ASW65R041E, ASW65R041EFDA, ASW65R046EFD, ASW65R095EFD, ASW65R110E, ASW65R120EFD, ASW80R290E, AUA039N10, SPP20N60C3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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