AUB045N10BT PDF and Equivalents Search

 

AUB045N10BT Specs and Replacement

Type Designator: AUB045N10BT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 229 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 123 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 485.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

AUB045N10BT substitution

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AUB045N10BT datasheet

 ..1. Size:929K  cn anhi
 aub045n10bt.pdf pdf_icon

AUB045N10BT

AUB045N10BT MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on)=4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Valu... See More ⇒

 6.1. Size:893K  cn anhi
 aup045n12 aub045n12.pdf pdf_icon

AUB045N10BT

AUP045N12, AUB045N12 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Par... See More ⇒

Detailed specifications: AUA039N10, AUA056N08BGL, AUA060N08AG, AUA062N08BG, AUB026N085, AUB033N08BG, AUB034N10, AUB039N10, IRF1010E

Keywords - AUB045N10BT MOSFET specs

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