AUB045N12 Specs and Replacement
Type Designator: AUB045N12
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 152 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 654 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
AUB045N12 substitution
- MOSFET ⓘ Cross-Reference Search
AUB045N12 datasheet
aup045n12 aub045n12.pdf
AUP045N12, AUB045N12 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Par... See More ⇒
aub045n10bt.pdf
AUB045N10BT MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on)=4.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Valu... See More ⇒
Detailed specifications: AUA056N08BGL, AUA060N08AG, AUA062N08BG, AUB026N085, AUB033N08BG, AUB034N10, AUB039N10, AUB045N10BT, IRFB3607
Keywords - AUB045N12 MOSFET specs
AUB045N12 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
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