AUN036N10 PDF and Equivalents Search

 

AUN036N10 Specs and Replacement

Type Designator: AUN036N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 865 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: DFN5X6

AUN036N10 substitution

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AUN036N10 datasheet

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aun036n10 aup039n10 aua039n10 aub039n10.pdf pdf_icon

AUN036N10

AUN036N10, AUP039N10, AUA039N10, AUB039N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance DFN5x6 RDS(ON) = 3.3m (typ.) TO220&220F&263 RDS(ON) = 3.6m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to... See More ⇒

Detailed specifications: AUB056N10, AUB060N08AG, AUB062N08BG, AUD056N08BGL, AUD060N055, AUD060N08AG, AUD062N08BG, AUD069N10A, IRFP250, AUN042N055, AUN045N085, AUN050N08BGL, AUN053N10, AUN060N08AG, AUN062N08BG, AUN063N10, AUN065N10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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