AUN042N055 MOSFET Datasheet: N-Ch, 55V, 125A. Full specification with pinout and replacement list

AUN042N055 Specs and Replacement

Type Designator: AUN042N055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1416 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: DFN5X6

AUN042N055 substitution

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AUN042N055 datasheet

..1. Size:1094K cn anhi
aud060n055 aun042n055 aub050n055 aup060n055.pdf pdf_icon

AUD060N055,AUN042N055,AUB050N055,AUP060N055 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance TO252 RDS(ON) = 4m (typ.) DFN5X6 RDS(ON) = 3.6m (typ.) TO263&TO220 RDS(ON) = 4.3m (typ.) Easy to control Gate switching Enhancement... See More ⇒

9.1. Size:1388K cn anhi
aup052n085 aub050n085 aun045n085.pdf pdf_icon

AUP052N085, AUB050N085, AUN045N085 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 4.2m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5 V Table 1 Key Performance Parameters Parameter Val... See More ⇒

Detailed specifications: AUB060N08AG, AUB062N08BG, AUD056N08BGL, AUD060N055, AUD060N08AG, AUD062N08BG, AUD069N10A, AUN036N10, IRF1407