AUP026N085 Specs and Replacement
Type Designator: AUP026N085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 195 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 3500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO220
AUP026N085 substitution
- MOSFET ⓘ Cross-Reference Search
AUP026N085 datasheet
aup026n085 aub026n085.pdf
AUP026N085, AUB026N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 2.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters P... See More ⇒
aup026n085 aub026n085 aur020n085.pdf
AUP026N085, AUB026N085, AUR020N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance TO220&TO263 RDS(on) = 2.1m (typ.) TOLL-8L RDS(on) = 1.8 m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced... See More ⇒
Detailed specifications: AUN045N085, AUN050N08BGL, AUN053N10, AUN060N08AG, AUN062N08BG, AUN063N10, AUN065N10, AUN084N10, IRF520, AUP033N08BG, AUP034N06, AUP034N10, AUP039N10, AUP045N12, AUP052N085, AUP056N08BGL, AUP056N10
Keywords - AUP026N085 MOSFET specs
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MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085
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