AUP033N08BG Specs and Replacement

Type Designator: AUP033N08BG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 1292 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO220

AUP033N08BG substitution

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AUP033N08BG datasheet

 ..1. Size:471K  cn anhi
 aub033n08bg aup033n08bg auw033n08bg.pdf pdf_icon

AUP033N08BG

AUB 8BG A N08BG 033N08BG B033N08 AUP033N AUW0 MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 9m (typ.) source on-res DS(ON) = 2.9 High speed power switc ching Enhanced b dv/dt capability body diod... See More ⇒

 9.1. Size:970K  cn anhi
 aun036n10 aup039n10 aua039n10 aub039n10.pdf pdf_icon

AUP033N08BG

AUN036N10, AUP039N10, AUA039N10, AUB039N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance DFN5x6 RDS(ON) = 3.3m (typ.) TO220&220F&263 RDS(ON) = 3.6m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to... See More ⇒

 9.2. Size:950K  cn anhi
 aup034n06.pdf pdf_icon

AUP033N08BG

AUP034N06 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 3m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Parameter Value Un... See More ⇒

 9.3. Size:1575K  cn anhi
 aup034n10 aub034n10.pdf pdf_icon

AUP033N08BG

AUP034N10, AUB034N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) = 2.9m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness Table 1 Key Performance Parameters Par... See More ⇒

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Detailed specifications: AUN050N08BGL, AUN053N10, AUN060N08AG, AUN062N08BG, AUN063N10, AUN065N10, AUN084N10, AUP026N085, IRF2807

Keywords - AUP033N08BG MOSFET specs

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