AP3N5R0MT Specs and Replacement

Type Designator: AP3N5R0MT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PMPAK5X6

AP3N5R0MT substitution

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AP3N5R0MT datasheet

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AP3N5R0MT

AP3N5R0MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 5m Low On-resistance D G RoHS Compliant & Halogen-Free D D S D Description AP3N5R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible ... See More ⇒

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AP3N5R0MT

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AP3N5R0MT

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 9.3. Size:1441K  cn apm
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AP3N5R0MT

AP3N50D 500V N-Channel Enhancement Mode MOSFET Description The AP3N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

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Detailed specifications: AUR014N10, AUR020N085, AUR020N10, AUR030N10, AUW025N10, AUW033N08BG, AP12A390YT, AP2P053Y, IRFP064N, AP3N9R5MT, AP3N9R5YT, AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, AP6NA3R2MT

Keywords - AP3N5R0MT MOSFET specs

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