SVF11N65T Specs and Replacement

Type Designator: SVF11N65T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.51 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.84 Ohm

Package: TO220

SVF11N65T substitution

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SVF11N65T datasheet

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 svf11n65t svf11n65f.pdf pdf_icon

SVF11N65T

SVF11N65T/F_Datasheet 11A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF11N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swi... See More ⇒

Detailed specifications: AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, AP6NA3R2MT, CRTT067N10N, EHBA036R1, FKBB3105, IRFZ44

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