ASDM100R066NQ Datasheet. Specs and Replacement

Type Designator: ASDM100R066NQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN5X6-8L

ASDM100R066NQ substitution

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ASDM100R066NQ datasheet

 ..1. Size:552K  ascend
asdm100r066nq.pdf pdf_icon

ASDM100R066NQ

ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary Advanced Trench MOS Technology 100 V Low Gate Charge VDS RDS(on),Typ 5.9 @ VGS=10V m Low R DS(ON) ID 68 A 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial. D G S ... See More ⇒

 5.1. Size:1441K  ascend
asdm100r090np.pdf pdf_icon

ASDM100R066NQ

ASDM100R090NP 100V N-CHANNEL MOSFET Product Summary Features High Speed Power Switching, Logic Level VDS 100 V Enhanced Body diode dv/dt capability RDS(on),typ m VGS=10V 9 Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested ID 75 A Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu... See More ⇒

 5.2. Size:626K  ascend
asdm100r045nq.pdf pdf_icon

ASDM100R066NQ

ASDM100R045NQ 100V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 100 V Good stability and uniformity with high EAS R DS(on),TYP@ VGS=10 V 3.7 m Excellent package for good heat dissipation I D 90 A Special process technology for high ESD capability Applicatio... See More ⇒

 6.1. Size:568K  ascend
asdm100r750pkq.pdf pdf_icon

ASDM100R066NQ

ASDM100R750PKQ -100V P-Channel MOSFET General Features Product Summary Split gate trench MOSFET technology V DS -100 V Low RDS(on) & FOM Extremely low switching loss R DS(on),Typ@ VGS=-10 V 75 m Excellent stability and uniformity I D -20 A Application Power management Portable equipment D G S P-channel TO-252 Absolute Maximum Ratings (T =25 unless ... See More ⇒

Detailed specifications: FTP02P15G, FTE15C35G, FTF15N35D, FTF25N35DHVT, FTF30P35D, ASDM100N15KQ, ASDM100N34KQ, ASDM100R045NQ, IRFP250N, ASDM100R090NP, ASDM100R160NKQ, ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q, ASDM20N20KQ, CRJQ80N65F, CRST030N10N

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