ASDM20N20KQ Datasheet. Specs and Replacement

Type Designator: ASDM20N20KQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO252

ASDM20N20KQ substitution

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ASDM20N20KQ datasheet

 ..1. Size:1062K  ascend
asdm20n20kq.pdf pdf_icon

ASDM20N20KQ

ASDM20N20KQ 20V N-Channel MOSFET Product Summary Features Super high dense cell design for BVDSS 20 V extremely low RDS(on) High power and current handing RDS(on),Typ.@VGS=4.5V 20 m capability Lead free product is acquired 20 ID A Application Load Switch PWM Application Power management Schematic diagram TO-252-2L top view Absolute Maximum Ratin... See More ⇒

 7.1. Size:491K  ascend
asdm20n12zb.pdf pdf_icon

ASDM20N20KQ

ASDM20N12ZB 20V N-CHANNEL MOSFET Product Summary Features 20V/12A V DS 20 V Super High Dense Cell Design R DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and Rugged I D 12 A Lead Free Available (RoHS Compliant) Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top view D G S SOT-23-3 Absolute Maximum Ratings (TA=25 C Unless O... See More ⇒

 7.2. Size:267K  ascend
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ASDM20N20KQ

ASDM20N90Q 20V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed V DS 20 V Green Device Available RDS(on),TYP@VGS=10V 1.5 m Super Low Gate Charge RDS(on),TYP@VGS=4.5V 1.8 m Excellent CdV/dt effect decline Advanced high cell density Trench technology I D 90 A Application Power Management in Inverter System top view PDFN5*6-8 Maximum rati... See More ⇒

 7.3. Size:413K  ascend
asdm20n100q.pdf pdf_icon

ASDM20N20KQ

ASDM20N100Q 20V N-Channel MOSFET Product Summary General Description 20V /100A Single N Power MOSFET V DS 20 V Very low on-resistance RDS(on) @ R DS(on),TYP@ VGS=10 V 1. 3 m VGS=4.5 V I D 100 A Pb-free lead plating; RoHS compliant DFN5x6-8 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 20 V TA=25 C 100 Continuous Drain Cur... See More ⇒

Detailed specifications: ASDM100N34KQ, ASDM100R045NQ, ASDM100R066NQ, ASDM100R090NP, ASDM100R160NKQ, ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q, 2N7002

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.