ASDM60N80KQ Datasheet. Specs and Replacement

Type Designator: ASDM60N80KQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 232 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm

Package: TO252

ASDM60N80KQ substitution

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ASDM60N80KQ datasheet

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 asdm60n80kq.pdf pdf_icon

ASDM60N80KQ

ASDM60N80KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 80 A Application PWM Load Switching Schematic diagram TO-252-2... See More ⇒

 7.1. Size:366K  ascend
 asdm60n30kq.pdf pdf_icon

ASDM60N80KQ

ASDM60N30KQ 60V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson BVDSS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS RDS(on),Typ.@ VGS=10 V 23 m Excellent package for good heat dissipation ID 30 A Special process technology for high ESD capability Application ... See More ⇒

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 asdm60n50kq.pdf pdf_icon

ASDM60N80KQ

ASDM60N50KQ 60V N-Channel MOSFET Product Summary FEATURE l Low gate charge V DS 60 V l Low C iss l Fast switching R DS(on),Typ@ VGS=10 V 8.5 m l 100% avalanche tested I D 50 A l Improved dv/dt capability Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Vol... See More ⇒

 7.3. Size:952K  ascend
 asdm60n45kq.pdf pdf_icon

ASDM60N80KQ

ASDM60N45KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current R DS(on),Typ@ VGS=10 V 12 m Good stability and uniformity with high EAS Excellent package for good heat dissipation I D 45 A Special process technology for high ESD capability Application... See More ⇒

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Detailed specifications: ASDM40R009NQ, ASDM4606S, ASDM4976S, ASDM540G, ASDM60N30KQ, ASDM60N45KQ, ASDM60N50KQ, ASDM60N70Q, AO4407

Keywords - ASDM60N80KQ MOSFET specs

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