ASDM68N80KQ Datasheet. Specs and Replacement

Type Designator: ASDM68N80KQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1037 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

ASDM68N80KQ substitution

- MOSFET ⓘ Cross-Reference Search

 

ASDM68N80KQ datasheet

 ..1. Size:957K  ascend
asdm68n80kq.pdf pdf_icon

ASDM68N80KQ

ASDM68N80KQ 68V N-Channel MOSFET Features Product Summary Trench Power Technology V DS 68 V Low RDS(ON) Low Gate Charge R DS(on),Typ@ VGS=10 V 7.7 m Optimized for Fast-switching Applications I D 80 A Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial TO-252 Schematic Diagram Absolute M... See More ⇒

 8.1. Size:633K  ascend
asdm6802zc.pdf pdf_icon

ASDM68N80KQ

ASDM6802ZC 30V N-CHANNEL MOSFET Features Product Summary High Power and current handing capability Lead free product is acquired V DS 30 V Surface Mount Package R DS(on),MAX@ VGS=10 V 45 m Available in SOT23-6 Package I D 4.5 A Applications PWM applications Load switch Power management D1 D2 Top View Top View G1 1 D1 6 S2 S1 2 5 3 G1... See More ⇒

 9.1. Size:855K  ascend
asdm60p12kq.pdf pdf_icon

ASDM68N80KQ

ASDM60P12KQ -60V P-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson BVDSS -60 V Fully characterized avalanche voltage and current Excellent package for good heat dissipation RDS(on)Typ.@VGS=-10V 62 m Application -12 ID A Load switch PWM application Schematic diagram TO-252-2L top view Absolute Maximum Rati... See More ⇒

 9.2. Size:486K  ascend
asdm60r042nq.pdf pdf_icon

ASDM68N80KQ

ASDM60R042NQ 60V N-Channel MOSFET General Features Product Summary Advanced Trench MOS Technology VDS 60 V Low On-Resistance 100% avalanche tested RDS(on).Typ@ VGS=10 V 4.4 m Fast Switching Speed 116 ID A Excellent package for good heat dissipation Application DC/DC Converters On board power for server Synchronous rectification DFN5 6-8 Ab... See More ⇒

Detailed specifications: ASDM60N30KQ, ASDM60N45KQ, ASDM60N50KQ, ASDM60N70Q, ASDM60N80KQ, ASDM60P12KQ, ASDM60R042NQ, ASDM6802ZC, IRF1407

Keywords - ASDM68N80KQ MOSFET specs

 ASDM68N80KQ cross reference

 ASDM68N80KQ equivalent finder

 ASDM68N80KQ pdf lookup

 ASDM68N80KQ substitution

 ASDM68N80KQ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs