BCT4N65 Datasheet. Specs and Replacement

Type Designator: BCT4N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220F

BCT4N65 substitution

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BCT4N65 datasheet

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BCT4N65

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Detailed specifications: ASDM30N120Q, ASDM30N150Q, ASDM30N75KQ, ASDM30N90Q, ASDM30P100KQ, BCT20N65, BCT7N65, BCD7N65, 7N60

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