BCD12N65 Datasheet. Specs and Replacement

Type Designator: BCD12N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.8 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO252

BCD12N65 substitution

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BCD12N65 datasheet

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 bct12n65 bcd12n65.pdf pdf_icon

BCD12N65

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Detailed specifications: ASDM30N90Q, ASDM30P100KQ, BCT20N65, BCT7N65, BCD7N65, BCT4N65, BCD4N65, BCT12N65, IRF830

Keywords - BCD12N65 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs