BMDFN2302 Datasheet. Specs and Replacement

Type Designator: BMDFN2302  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 13.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: DFN1006-3L

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BMDFN2302 datasheet

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BMDFN2302

BMDFN2302 N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 0.71A D R @V = 4.5V, TYP =220m DS(ON) GS R @V = 2.5V, TYP =260m DS(ON) GS R @V = 1.8V, TYP =315m DS(ON) GS G S General Description Trench Technology G S Supper high density cell design D Excellent ON resistance for higher DC current Extremely Low Threshold Voltage ... See More ⇒

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BMDFN2302

BMDFN2301 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -0.74A D R @V = -4.5V, TYP =230m DS(ON) GS R @V = -2.8V, TYP =320m DS(ON) GS R @V = -2.5V, TYP =355m DS(ON) GS R @V = -1.8V, TYP =650m DS(ON) GS S G General Description G Advanced trench process technology S D High Density Cell Design For Ultra Low On-Resistance ... See More ⇒

Detailed specifications: CS65N25AKR, AO3401F, AO3415E, BM3134E, BM3134KE, BM3139KT, BM8205, BMDFN2301, IRFZ44N

Keywords - BMDFN2302 MOSFET specs

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