BPM0405CG Datasheet. Specs and Replacement
Type Designator: BPM0405CG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8_7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3(5.5) nS
Cossⓘ - Output Capacitance: 112_100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019_0.035 Ohm
Package: SOP8
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BPM0405CG datasheet
bpm0405cg.pdf
BPM0405CG 40V Complementary MOSFET General Description Application The BPM0405CG uses advanced trench technology to H-bridge provide excellent R and low gate charge. The Inverters DS(ON) complementary MOSFETs can be used in a wide variety of applications. Features N-Channel V =40V, I =8A DS D R ... See More ⇒
Detailed specifications: SI2301F, SI2309S, BL4N90, BLM3404, B50T040F, B50T070F, BP0405SCG, BPM0306CG, IRLZ44N
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