MS40P05AU Datasheet. Specs and Replacement

Type Designator: MS40P05AU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT23

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MS40P05AU datasheet

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MS40P05AU

MS40P05(AU) P-Channel 40-V (D-S) MOSFET Description The device is the highest performance trench Graphic Symbol P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability appro... See More ⇒

Detailed specifications: BPM0405CG, BPMS04N003M, MS23N06A, MS23P03, MS34P01, MS34P07, MS40N05, MS40P05, AON6414A

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