All MOSFET. ZXMD63P02X Datasheet

 

ZXMD63P02X MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMD63P02X

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 1.7 A

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: MSOP8

ZXMD63P02X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMD63P02X Datasheet (PDF)

1.1. zxmd63p02x.pdf Size:204K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

2.1. zxmd63p03x.pdf Size:339K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resist

 4.1. zxmd63c02x.pdf Size:204K _upd-mosfet

ZXMD63P02X
ZXMD63P02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

4.2. zxmd63c02x.pdf Size:322K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency,

 4.3. zxmd63n02x.pdf Size:156K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13?; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-re

4.4. zxmd63n03x.pdf Size:332K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistan

 4.5. zxmd63c03x.pdf Size:378K _diodes

ZXMD63P02X
ZXMD63P02X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage

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