ZXMD63P02X
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMD63P02X
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 1.7
A
Qgⓘ - Total Gate Charge: 5.25
nC
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package:
MSOP8
ZXMD63P02X
Datasheet (PDF)
..1. Size:204K diodes
zxmd63p02x.pdf 
ZXMD63P02XDUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo
6.1. Size:339K diodes
zxmd63p03x.pdf
ZXMD63P03XDUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-r
8.1. Size:332K diodes
zxmd63n03x.pdf
ZXMD63N03XDUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-res
8.2. Size:156K diodes
zxmd63n02x.pdf
ZXMD63N02XDUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.13; I =2.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo
8.3. Size:322K diodes
zxmd63c02x.pdf
ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien
8.4. Size:378K diodes
zxmd63c03x.pdf
ZXMD63C03X30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3AP-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low volt
8.5. Size:204K zetex
zxmd63c02x.pdf
ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien
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