DMP3035LSS
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP3035LSS
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30.7
nC
Cossⓘ -
Output Capacitance: 1655
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package:
SO8
DMP3035LSS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP3035LSS
Datasheet (PDF)
..1. Size:169K diodes
dmp3035lss.pdf
DMP3035LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 14m @ VGS = -20V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 18m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020
7.1. Size:194K diodes
dmp3035sfg.pdf
DMP3035SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -
8.1. Size:305K diodes
dmp3037lss.pdf
DMP3037LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on) max Low Input Capacitance TC = +25C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi
8.2. Size:268K diodes
dmp3030sn.pdf
DMP3030SNP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By
8.3. Size:382K diodes
dmp3036ssd.pdf
DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
8.4. Size:371K diodes
dmp3036sss.pdf
DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -19.5A -30V Fast Switching Speed -16.2A 29m @ VGS = -5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.
8.5. Size:420K diodes
dmp3036sfg.pdf
DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab
8.6. Size:537K diodes
dmp3036sfv.pdf
DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m
8.7. Size:57K tysemi
dmp3030sn.pdf
Product specificationDMP3030SNFeatures Mechanical Data Low On-Resistance Case: SC59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminals: Finish Matte Tin annealed ove
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