2SK680A
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK680A
Marking Code: YB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 44
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
SC62
2SK680A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK680A
Datasheet (PDF)
9.5. Size:236K inchange semiconductor
2sk682.pdf 
isc N-Channel MOSFET Transistor 2SK682DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f
9.6. Size:236K inchange semiconductor
2sk683.pdf
isc N-Channel MOSFET Transistor 2SK683DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f
9.7. Size:236K inchange semiconductor
2sk684.pdf
isc N-Channel MOSFET Transistor 2SK684DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable fo
Datasheet: 2SK519
, 2SK523
, 2SK533
, 2SK611
, 2SK612
, 2SK654
, 2SK660
, 2SK679A
, 12N60
, 2SK681A
, 2SK699
, 2SK700
, 2SK701
, 2SK702
, 2SK703
, 2SK705
, 2SK724
.
