DMP3160L
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP3160L
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.08
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
Cossⓘ -
Output Capacitance: 227
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
SOT23
DMP3160L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP3160L
Datasheet (PDF)
..1. Size:107K diodes
dmp3160l.pdf 
DMP3160LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
..2. Size:164K tysemi
dmp3160l.pdf
Product specificationDMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)TA = +25C Low Gate Threshold Voltage Low Input Capacitance 122m @ VGS = -10V -2.7A -30V Fast Switching Speed 190m @ VGS = -4.5V -2.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
9.1. Size:539K diodes
dmp3125l.pdf
DMP3125L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 95m @ VGS = -10V -2.5A Fast Switching Speed -30V -2.0A 145m @ VGS = -4.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications
9.2. Size:200K diodes
dmp31d0u.pdf
A Product Line ofDiodes IncorporatedDMP31D0U30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Max ID Fast Switching Speed V(BR)DSS Max RDS(on) @ TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 1 @ VGS = -4.5V -0.67A ESD Protected Gate 2KV
9.3. Size:184K diodes
dmp3105lvt.pdf
DMP3105LVT30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 75m @ VGS = -10V -3.9A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -30V 105m @ VGS = -4.5V -3.3A "Green" Device (Note 2)
9.4. Size:220K diodes
dmp31d0ufb4.pdf
A Product Line ofDiodes IncorporatedDMP31D0UFB430V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 Max ID 0.4mm profile ideal for low profile applications V(BR)DSS Max RDS(on) @ TA = 25C Low Gate Threshold Voltage Fast Switching Speed 1 @ VGS = -4.5V -0.76A
9.5. Size:107K diodes
dmp3120l.pdf
DMP3120LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
9.6. Size:119K diodes
dmp3100l.pdf
DMP3100LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23100m @ VGS = -10V, ID = -2.7A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 170m @ VGS = -4.5V, ID = -2.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: F
9.7. Size:120K diodes
dmp3130l.pdf
DMP3130LP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
9.8. Size:162K tysemi
dmp3120l.pdf
Product specificationDMP3120LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
9.9. Size:80K tysemi
dmp3130l.pdf
Product specificationDMP3130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
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