All MOSFET. ZXMP10A17G Datasheet

 

ZXMP10A17G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP10A17G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Qgⓘ - Total Gate Charge: 7.1 nC
   Cossⓘ - Output Capacitance: 424 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT223

 ZXMP10A17G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP10A17G Datasheet (PDF)

 ..1. Size:636K  diodes
 zxmp10a17g.pdf

ZXMP10A17G ZXMP10A17G

A Product Line ofDiodes IncorporatedZXMP10A17G100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

 0.1. Size:762K  cn vbsemi
 zxmp10a17gta.pdf

ZXMP10A17G ZXMP10A17G

ZXMP10A17GTAwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Applicatio

 5.1. Size:699K  diodes
 zxmp10a17e6 zxmp10a17e6ta.pdf

ZXMP10A17G ZXMP10A17G

A Product Line ofDiodes IncorporatedZXMP10A17E6100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

 5.2. Size:639K  diodes
 zxmp10a17e6q.pdf

ZXMP10A17G ZXMP10A17G

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 5.3. Size:678K  diodes
 zxmp10a17k.pdf

ZXMP10A17G ZXMP10A17G

A Product Line ofDiodes IncorporatedZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1

 5.4. Size:600K  diodes
 zxmp10a17e6.pdf

ZXMP10A17G ZXMP10A17G

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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