All MOSFET. ZXMS6006SG Datasheet

 

ZXMS6006SG MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMS6006SG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT223

 ZXMS6006SG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMS6006SG Datasheet (PDF)

 ..1. Size:243K  diodes
 zxms6006sg.pdf

ZXMS6006SG ZXMS6006SG

A Product Line of Diodes IncorporatedZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 0.1. Size:311K  diodes
 zxms6006sgq.pdf

ZXMS6006SG ZXMS6006SG

ZXMS6006SGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Protection

 6.1. Size:276K  diodes
 zxms6006dt8q.pdf

ZXMS6006SG ZXMS6006SG

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 6.2. Size:241K  diodes
 zxms6006dg.pdf

ZXMS6006SG ZXMS6006SG

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 6.3. Size:340K  diodes
 zxms6006dgq.pdf

ZXMS6006SG ZXMS6006SG

GreenZXMS6006DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

 6.4. Size:267K  diodes
 zxms6006dt8.pdf

ZXMS6006SG ZXMS6006SG

A Product Line of Diodes IncorporatedZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

Datasheet: ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , ZXMS6005DT8 , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , 75N75 , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , ZXMHN6A07T8 .

 

 
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