ZXMHC6A07N8 MOSFET PDF: NP-Ch, 60V, 1.8A. Datasheet. Full specification with pinout and replacement list

ZXMHC6A07N8 Specs and Replacement

   Type Designator: ZXMHC6A07N8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SO8

ZXMHC6A07N8 substitution

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ZXMHC6A07N8 datasheet

..1. Size:732K diodes
zxmhc6a07n8.pdf pdf_icon

A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25 C 0.25 @ VGS= 10V 1.8A N-CH 60V 3.2nC 0.35 @ VGS= 4.5V 1.5A 0.40 @ VGS= -10V -1.4A P-CH -60V 5.1nC 0.60 @ VGS= -4.5V -1.2A P1S/P2S Description This new generation complementary MOSFET H-Bridge features ... See More ⇒

5.1. Size:277K diodes
zxmhc6a07t8.pdf pdf_icon

ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low... See More ⇒

9.1. Size:267K diodes
zxmhc3a01t8.pdf pdf_icon

ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS= 30V RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V RDS(on)= 0.21 ; ID= -2.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, lo... See More ⇒

9.2. Size:721K diodes
zxmhc3a01n8.pdf pdf_icon

A Product Line of Diodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25 C 125m @ VGS= 10V 2.7A N-CH 30V 3.9nC 180m @ VGS= 4.5V 2.2A 210m @ VGS= -10V -2.1A P-CH -30V 5.2nC 330m @ VGS= -4.5V -1.6A P1S/P2S Description This new generation complementary MOSFET H-Bridge features l... See More ⇒