All MOSFET. ZXMHC6A07T8 Datasheet

 

ZXMHC6A07T8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMHC6A07T8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Qgⓘ - Total Gate Charge: 1.65 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SM8

 ZXMHC6A07T8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMHC6A07T8 Datasheet (PDF)

 ..1. Size:277K  diodes
 zxmhc6a07t8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

ZXMHC6A07T8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low

 5.1. Size:732K  diodes
 zxmhc6a07n8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 0.25 @ VGS= 10V 1.8A N-CH 60V 3.2nC0.35 @ VGS= 4.5V 1.5A 0.40 @ VGS= -10V -1.4A P-CH -60V 5.1nC0.60 @ VGS= -4.5V -1.2A P1S/P2S Description This new generation complementary MOSFET H-Bridge features

 9.1. Size:267K  diodes
 zxmhc3a01t8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

ZXMHC3A01T8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1AP-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. Thismakes them ideal for high efficiency, lo

 9.2. Size:721K  diodes
 zxmhc3a01n8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

A Product Line ofDiodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 125m @ VGS= 10V 2.7A N-CH 30V 3.9nC180m @ VGS= 4.5V 2.2A 210m @ VGS= -10V -2.1A P-CH -30V 5.2nC330m @ VGS= -4.5V -1.6A P1S/P2S Description This new generation complementary MOSFET H-Bridge features l

 9.3. Size:732K  diodes
 zxmhc3f381n8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 33m @ VGS= 10V 5.0A N-CH 30V 9.0nC60m @ VGS= 4.5V 3.9A 55m @ VGS= -10V -4.1A P-CH -30V 12.7nC80m @ VGS= -4.5V -3.3A P1S/P2S Description This new generation complementary MOSFET H-Bridge features lo

 9.4. Size:287K  diodes
 zxmhc10a07t8.pdf

ZXMHC6A07T8 ZXMHC6A07T8

ZXMHC10A07T8COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4AP-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficie

Datasheet: ZXMS6006DT8 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , AO3400 , ZXMHN6A07T8 , 2SK3115B , STU437S , STU435S , 2SJ652 , 2SJ656 , 2SK2394 , 2SK3557 .

 

 
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