All MOSFET. 2SK4210 Datasheet

 

2SK4210 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK4210

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 75 nC

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3PB

2SK4210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK4210 Datasheet (PDF)

1.1. 2sk4210.pdf Size:497K _sanyo

2SK4210
2SK4210

2SK4210 Ordering number : ENA1517 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4210 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-So

4.1. 2sk4213-zk 2sk4213a-zk.pdf Size:152K _update

2SK4210
2SK4210

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ M

4.2. 2sk4212a-zk.pdf Size:146K _update

2SK4210
2SK4210

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ M

 4.3. 2sk4212-zk.pdf Size:146K _update

2SK4210
2SK4210

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.8 mΩ M

4.4. 2sk4212.pdf Size:252K _renesas

2SK4210
2SK4210

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. 2sk4213.pdf Size:153K _nec

2SK4210
2SK4210

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ M

Datasheet: 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , 2SK4209 , IRFZ44 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M .

 

 
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