BFL4001 MOSFET. Datasheet pdf. Equivalent
Type Designator: BFL4001
Marking Code: FL4001
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 44 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO220F
BFL4001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BFL4001 Datasheet (PDF)
bfl4001.pdf
BFL4001Ordering number : ENA1638BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures ON-resistance RDS(on)=2.1 (typ.) Input capacitance Ciss=850pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG
bfl4004.pdf
BFL4004Ordering number : ENA1796SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4004ApplicationsFeatures ON-resistance RDS(on)=1.9 (typ.) Input capacitance Ciss=710pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 800 VG
bfl4007 blf4007.pdf
BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings
bfl4036.pdf
BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V
bfl4026.pdf
BFL4026Ordering number : ENA1797SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4026ApplicationsFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VG
bfl4037.pdf
BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V
bfl4026.pdf
Ordering number : ENA1797ABFL4026N-Channel Power MOSFEThttp://onsemi.com900V, 5A, 3.6 , TO-220F-3FSFeatures ON-resistance RDS(on)=2.8 (typ.) Input capacitance Ciss=650pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900 VGate-to-Source Voltage VGSS 30 VIDc*1
bfl4026.pdf
isc N-Channel MOSFET Transistor BFL4026FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: ATP218 , ATP301 , ATP302 , ATP404 , ATP405 , ATP602 , ATP613 , BBS3002 , IRFP450 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , BMS4007 , BS107A , BSS123L .
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