ECH8659 MOSFET. Datasheet pdf. Equivalent
Type Designator: ECH8659
Marking Code: TE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.8 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: ECH8
ECH8659 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ECH8659 Datasheet (PDF)
ech8659.pdf
ECH8659Ordering number : ENA1224ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8659ApplicationsFeatures 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-So
ech8654.pdf
Ordering number : ENA0981ECH8654SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8654ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
ech8653.pdf
Ordering number : ENA0851 ECH8653SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8653ApplicationsFeatures Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra
ech8651r.pdf
Ordering number : ENA1010 ECH8651RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8651RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8655r.pdf
Ordering number : ENA1011 ECH8655RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8655RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8657.pdf
ECH8657Ordering number : ENA1710ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8657ApplicationsFeatures 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID
ech8652.pdf
Ordering number : ENA0935ECH8652SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8652ApplicationsFeatures Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-S
ech8656.pdf
ECH8656Ordering number : EN9010SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8656ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Unit
ech8651r.pdf
Ordering number : ENA1010AECH8651RN-Channel Power MOSFEThttp://onsemi.com24V, 10A, 14m , Dual ECH8Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParame
ech8657.pdf
Ordering number : ENA1710BECH8657N-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 59m , Dual ECH8Features 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4.5 ADrain Curre
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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