All MOSFET. FW907 Datasheet

 

FW907 Datasheet and Replacement


   Type Designator: FW907
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

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FW907 Datasheet (PDF)

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FW907

FW907Ordering number : ENA1810SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceFW907ApplicationsFeatures ON-resistance Nch: RDS(on)1=13m (typ.), Pch: RDS(on)1=20m (typ.) 4V drive N-channel MOSFET + P-channel MOSFETSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions N-channe

Datasheet: EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , STP75NF75 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 , MCH3484 , MCH6320 .

History: IXFK32N50Q | HUF75345G3

Keywords - FW907 MOSFET datasheet

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