All MOSFET. FW907 Datasheet

 

FW907 Datasheet and Replacement


   Type Designator: FW907
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
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FW907 Datasheet (PDF)

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FW907

FW907Ordering number : ENA1810SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceFW907ApplicationsFeatures ON-resistance Nch: RDS(on)1=13m (typ.), Pch: RDS(on)1=20m (typ.) 4V drive N-channel MOSFET + P-channel MOSFETSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions N-channe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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