FW907 Specs and Replacement
Type Designator: FW907
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
FW907 substitution
- MOSFET ⓘ Cross-Reference Search
FW907 datasheet
fw907.pdf
FW907 Ordering number ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device FW907 Applications Features ON-resistance Nch RDS(on)1=13m (typ.), Pch RDS(on)1=20m (typ.) 4V drive N-channel MOSFET + P-channel MOSFET Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions N-channe... See More ⇒
Detailed specifications: EMH2801 , FW274 , FW282 , FW707 , FW811 , FW812 , FW813 , FW906 , 7N65 , J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 , MCH3484 , MCH6320 .
Keywords - FW907 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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