All MOSFET. MCH6321 Datasheet

 

MCH6321 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCH6321

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 4 A

Maximum Drain-Source On-State Resistance (Rds): 0.063 Ohm

Package: MCPH6

MCH6321 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MCH6321 说明书

1.1. mch6321.pdf Size:269K _sanyo

MCH6321
MCH6321

Ordering number : ENA0963 MCH6321 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6321 Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW

4.1. mch6320.pdf Size:265K _sanyo

MCH6321
MCH6321

Ordering number : ENA0815 MCH6320 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6320 Applications Features • Ultrahigh-speed switching. • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --3.5

5.1. mch6302.pdf Size:30K _sanyo

MCH6321
MCH6321

Ordering number : ENN7132 MCH6302 P-Channel Silicon MOSFET MCH6302 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2193A • 4V drive. [MCH6302] 0.3 0.15 4 5 6 3 2 1 1 : Drain 0.65 2 : Drain 6 5 4 2.0 3 : Gate (Bottom view) 4 : Source 5 : Drain 6 : Drain SANYO : MCPH6 1 2 3 (Top view)

5.2. mch6331.pdf Size:268K _sanyo

MCH6321
MCH6321

Ordering number : ENA1017 MCH6331 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6331 Applications Features • Low ON-resistance. • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --3.5 A Drain

5.3. mch6342.pdf Size:485K _sanyo

MCH6321
MCH6321

MCH6342 Ordering number : ENA1553 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6342 Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • Halogen free compliance. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-

5.4. mch6341.pdf Size:64K _sanyo

MCH6321
MCH6321

Ordering number : ENA1272 MCH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6341 Applications Features • Low ON-resistance. • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --5 A Drain Cu

5.5. mch6303.pdf Size:27K _sanyo

MCH6321
MCH6321

Ordering number : ENN6778 MCH6303 P-Channel Silicon MOSFET MCH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2193 • 2.5V drive. [MCH6303] 0.3 0.15 6 5 4 1 2 3 0.65 1 : Drain 2.0 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta=25°C

5.6. mch6344.pdf Size:342K _sanyo

MCH6321
MCH6321

MCH6344 Ordering number : EN8934 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6344 Applications Features • ON-resistance RDS(on)1=115m (typ.) ? • 4V drive • Halogen free compliance Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage

5.7. mch6336.pdf Size:66K _sanyo

MCH6321
MCH6321

Ordering number : ENA0958 MCH6336 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6336 Applications Features • Ultrahigh-speed switching. • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --5 A

5.8. mch6307.pdf Size:29K _sanyo

MCH6321
MCH6321

Ordering number : ENN7080 MCH6307 P-Channel Silicon MOSFET MCH6307 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2193A • 1.8V drive. [MCH6307] 0.3 0.15 4 5 6 3 2 1 0.65 1 : Drain 2 : Drain 2.0 6 5 4 3 : Gate 4 : Source 5 : Drain 6 : Drain 1 2 3 SANYO : MCPH6 Specifications Absolute

5.9. mch6305.pdf Size:28K _sanyo

MCH6321
MCH6321

Ordering number : ENN6943 MCH6305 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2193 • 2.5V drive. [MCH6305] 0.3 0.15 6 5 4 1 2 3 0.65 1 : Drain 2.0 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications SANYO : MCPH6 Absolute Maximum Ratings at Ta=25°C

5.10. mch6337.pdf Size:66K _sanyo

MCH6321
MCH6321

Ordering number : ENA0959 MCH6337 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device MCH6337 Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain

Datasheet: J310 , MCH3374 , MCH3377 , MCH3383 , MCH3475 , MCH3477 , MCH3484 , MCH6320 , 2SK3569 , MCH6331 , MCH6336 , MCH6337 , MCH6341 , MCH6342 , MCH6344 , MCH6421 , MCH6431 .

 


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