MCH6437 Datasheet and Replacement

MCH6437Ordering number : ENA1776SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6437ApplicationsFeatures ON-resistance RDS(on)1=18m (typ.) 1.8V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrai

MCH6437 Power MOSFET www.onsemi.com 20V, 24m, 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m@ 4.5V 1.8V Drive 20V 35m@ 2.5V 7A ESD Diode-Protected Gate 65m@ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value1, 2,

MCH6436Ordering number : ENA1565ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6436ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS

MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour

MCH6436 Power MOSFET www.onsemi.com 30V, 34m, 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m@ 4.5V 1.8V Drive 30V 49m@ 2.5V 6A High Speed Switching 69m@ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25C 1, 2, 5, 6