All MOSFET. MMDF1N05E Datasheet

 

MMDF1N05E MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMDF1N05E
   Marking Code: F1N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 30(max) nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SO8

 MMDF1N05E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMDF1N05E Datasheet (PDF)

 ..1. Size:147K  motorola
 mmdf1n05e.pdf

MMDF1N05E MMDF1N05E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF1N05E/DMedium Power Surface Mount ProductsMMDF1N05ETMOS Dual N-ChannelField Effect TransistorsMiniMOS devices are an advanced series of power MOSFETswhich utilize Motorolas TMOS process. These miniature surfaceDUAL TMOS MOSFETmount MOSFETs feature ultra low RDS(on) and true logic level50 VOLTSperforman

 0.1. Size:72K  onsemi
 mmdf1n05er2g.pdf

MMDF1N05E MMDF1N05E

MMDF1N05EPower MOSFET1 Amp, 50 VoltsNChannel SO8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedraintosource diode has a low reverse recovery time. MiniMOSt1 AMPEREdevices are designed for use in low vo

 0.2. Size:75K  onsemi
 mmdf1n05e-d.pdf

MMDF1N05E MMDF1N05E

MMDF1N05EPower MOSFET1 Amp, 50 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)http://onsemi.comand true logic level performance. They are capable of withstandinghigh energy in the avalanche and commutation modes and the1 AMPERE, 50 VOLTSdrain-to-source diode has a low reverse recovery time. MiniMOStRDS(on) = 300 mWdevices are design

 6.1. Size:169K  motorola
 mmdf1n05.pdf

MMDF1N05E MMDF1N05E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF1N05E/DMedium Power Surface Mount ProductsMMDF1N05ETMOS Dual N-ChannelField Effect TransistorsMiniMOS devices are an advanced series of power MOSFETswhich utilize Motorolas TMOS process. These miniature surfaceDUAL TMOS MOSFETmount MOSFETs feature ultra low RDS(on) and true logic level50 VOLTSperforman

Datasheet: MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L , MMBFJ310L , MMBFU310L , STF13NM60N , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E .

 

 
Back to Top