All MOSFET. MMDF1N05E Datasheet

 

MMDF1N05E MOSFET. Datasheet pdf. Equivalent

Type Designator: MMDF1N05E

SMD Transistor Code: F1N05

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Total Gate Charge (Qg): 12.5 nC

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: SOIC8

MMDF1N05E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMDF1N05E Datasheet (PDF)

1.1. mmdf1n05er2g.pdf Size:72K _update_mosfet

MMDF1N05E
MMDF1N05E

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http://onsemi.com high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOSt 1 AMPERE devices are designed for use in low vo

1.2. mmdf1n05e.pdf Size:147K _motorola

MMDF1N05E
MMDF1N05E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS? devices are an advanced series of power MOSFETs which utilize Motorolas TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performance. The

 1.3. mmdf1n05e-d.pdf Size:75K _onsemi

MMDF1N05E
MMDF1N05E

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) http://onsemi.com and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the 1 AMPERE, 50 VOLTS drain-to-source diode has a low reverse recovery time. MiniMOSt RDS(on) = 300 mW devices are designed

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