All MOSFET. NCV8401 Datasheet

 

NCV8401 Datasheet and Replacement


   Type Designator: NCV8401
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 42 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: DPAK
 

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NCV8401 Datasheet (PDF)

 ..1. Size:122K  onsemi
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NCV8401

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

 0.1. Size:123K  onsemi
ncv8401a ncv8401adtrkg ncv8401dtrkg.pdf pdf_icon

NCV8401

NCV8401, NCV8401ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8401/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(C

 8.1. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8401

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

 8.2. Size:92K  onsemi
ncv8402a ncv8402astt1g.pdf pdf_icon

NCV8401

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm

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