All MOSFET. NCV8440 Datasheet

 

NCV8440 Datasheet and Replacement


   Type Designator: NCV8440
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 710 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT223
 

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NCV8440 Datasheet (PDF)

 ..1. Size:84K  onsemi
ncv8440 ncv8440a.pdf pdf_icon

NCV8440

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureswww.onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSS RDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Series Ga

 0.1. Size:128K  onsemi
ncv8440-a.pdf pdf_icon

NCV8440

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie

 0.2. Size:116K  onsemi
ncv8440a.pdf pdf_icon

NCV8440

NCV8440, NCV8440AProtected Power MOSFET2.6 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ ESD ProtectionFeatureshttp://onsemi.com Diode Clamp Between Gate and Source ESD Protection - Human Body Model 5000 VVDSSRDS(ON) TYP ID MAX(Clamped) Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on)52 V 95 mW @ 10 V 2.6 A Internal Serie

 9.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8440

NCV8401Self-Protected Low SideDriver with Temperatureand Current LimitNCV8401 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltage protection.This device offers protection and is suitable for harsh automotiveVDSS ID MAX(Clamped) RDS(

Datasheet: MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 , IRF1405 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , FDME910PZT , NDD05N50Z .

History: MDP2N60TH | IXFX90N30 | IRF6898M | 2SK2209-01R

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