NDD04N60Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDD04N60Z
Marking Code: 4N60ZG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 62
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
DPAK
IPAK
NDD04N60Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDD04N60Z
Datasheet (PDF)
..1. Size:291K 1
ndf04n60z ndd04n60z.pdf 
NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam
..2. Size:148K 1
ndf04n60z ndp04n60z ndd04n60z.pdf
NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS
..3. Size:136K onsemi
ndf04n60z ndd04n60z.pdf
NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete
..4. Size:130K onsemi
ndf04n60z ndp04n60z ndd04n60z.pdf
NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (
0.1. Size:327K inchange semiconductor
ndd04n60z-1g.pdf
isc N-Channel MOSFET Transistor NDD04N60Z-1GFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive
7.1. Size:152K onsemi
ndf04n62z ndd04n62z.pdf
NDF04N62Z, NDD04N62ZN-Channel Power MOSFET620 V, 2.0 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant620 V2.0 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParameter Symbol
8.1. Size:118K onsemi
ndd04n50z.pdf
NDD04N50ZN-Channel Power MOSFET500 V, 2.7 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V2.7 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit
Datasheet: NCV8405
, NCV8406
, NCV8440
, NCV8450
, NDD02N60Z
, NDD03N50Z
, NDD03N60Z
, NDD04N50Z
, 2SK3918
, FDME910PZT
, NDD05N50Z
, NDF02N60Z
, NDF03N60Z
, NDF04N60Z
, FDMA910PZ
, NDF04N62Z
, NDF05N50Z
.
