NDF06N62Z Datasheet and Replacement
Type Designator: NDF06N62Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220FP
NDF06N62Z substitution
NDF06N62Z Datasheet (PDF)
ndf06n62z ndp06n62z.pdf

NDF06N62Z, NDP06N62ZN-Channel Power MOSFET620 V, 0.98 W,Features Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)620 VRating Symbol NDF06N62Z NDP06N62Z Unit 0.98 Drain-to-Source Voltage VDSS 620 VContin
ndf06n60z ndp06n60z.pdf

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET0.98 W, 600 VoltsFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AApplications600 V0.98 Adapter (Notebook, Printer, Gaming) LCD Panel PowerN-Channel Lighting BallastsD (2)ABSOLUTE MAXIMUM RA
ndf06n60z ndp06n60z.pdf

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET600 V, 1.2 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant600 V1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP Unit
Datasheet: NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , FDMC8327L , IRF740 , NDF08N50Z , NDF08N60Z , NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N .
Keywords - NDF06N62Z MOSFET datasheet
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