NTB5405N PDF and Equivalents Search

 

NTB5405N Specs and Replacement

Type Designator: NTB5405N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 116 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: D2PAK

NTB5405N substitution

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NTB5405N datasheet

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NTB5405N

NTB5405N Power MOSFET 40 V, 116 A, Single N-Channel, D2PAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX Applications V(BR)DSS RDS(ON) TYP (Note 1) Electronic Brake Systems 40 V 4.9 m @ 10 V 116 A Electronic Power Steering Bridge Circuits N-Channel MAXIMUM RATINGS (TJ = 25 C unless ... See More ⇒

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NTB5405N

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NTB5405N

NTB5404N, NTP5404N Power MOSFET 40 V, 136 A, Single N-Channel, D2PAK & TO-220 Features Low RDS(on) http //onsemi.com High Current Capability ID MAX Low Gate Charge V(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device 40 V 3.5 mW @ 10 V 136 A Applications D Electronic Brake Systems Electronic Power Steering N-Channel Bridge Circuits G MAXIMUM RATI... See More ⇒

 8.2. Size:117K  onsemi
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NTB5405N

NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N-Channel, D2PAK & TO-220 Features Low RDS(on) http //onsemi.com High Current Capability ID MAX Low Gate Charge V(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N 40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS Compliant Applications D Electronic Brake... See More ⇒

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Detailed specifications: NTA4151P, NTA4153N, NTA7002N, NTB25P06, NTB35N15, NTB45N06, NTB45N06L, NTB5404N, 8205A, NTB5426N, NTB5605P, NTB60N06, NTB6410AN, NTB6411AN, NTB6412AN, NTB6413AN, NTD110N02R

Keywords - NTB5405N MOSFET specs

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