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NTB6410AN Specs and Replacement

Type Designator: NTB6410AN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: D2PAK

NTB6410AN substitution

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NTB6410AN datasheet

 ..1. Size:144K  onsemi
ntb6410an ntp6410an.pdf pdf_icon

NTB6410AN

NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒

 ..2. Size:81K  onsemi
ntb6410an ntp6410an nvb6410an.pdf pdf_icon

NTB6410AN

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features www.onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Channel... See More ⇒

 0.1. Size:138K  onsemi
ntb6410ang ntp6410ang.pdf pdf_icon

NTB6410AN

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Chan... See More ⇒

 8.1. Size:138K  onsemi
ntb6412ang ntp6412ang.pdf pdf_icon

NTB6410AN

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒

Detailed specifications: NTB35N15, NTB45N06, NTB45N06L, NTB5404N, NTB5405N, NTB5426N, NTB5605P, NTB60N06, IRF9540, NTB6411AN, NTB6412AN, NTB6413AN, NTD110N02R, NTD14N03R, NTD18N06L, NTD20N03L27, NTD20N06

Keywords - NTB6410AN MOSFET specs

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