NTB6412AN Specs and Replacement
Type Designator: NTB6412AN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0182 Ohm
Package: D2PAK
NTB6412AN substitution
- MOSFET ⓘ Cross-Reference Search
NTB6412AN datasheet
ntb6412an ntp6412an nvb6412an.pdf
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th... See More ⇒
ntb6412an ntp6412an.pdf
NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 18.2 mW @ 10 V 58 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channe... See More ⇒
ntb6412ang ntp6412ang.pdf
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒
ntb6413ang ntp6413ang.pdf
NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 28 mW @ 10 V 42 A Qualified and PPAP Capable The... See More ⇒
Detailed specifications: NTB45N06L, NTB5404N, NTB5405N, NTB5426N, NTB5605P, NTB60N06, NTB6410AN, NTB6411AN, 2SK3878, NTB6413AN, NTD110N02R, NTD14N03R, NTD18N06L, NTD20N03L27, NTD20N06, NTD20N06L, NTD20P06L
Keywords - NTB6412AN MOSFET specs
NTB6412AN cross reference
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