NTB6413AN PDF Specs and Replacement
Type Designator: NTB6413AN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 42
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 84
nS
Cossⓘ -
Output Capacitance: 280
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
D2PAK
-
MOSFET ⓘ Cross-Reference Search
NTB6413AN PDF Specs
..1. Size:132K onsemi
ntb6413an ntp6413an nvb6413an.pdf 
NTB6413AN, NTP6413AN, NVB6413AN MOSFET Power, N-Channel 100 V, 42 A, 28 mW www.onsemi.com Features Low RDS(on) ID MAX High Current Capability V(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested 100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-C... See More ⇒
..2. Size:143K onsemi
ntb6413an ntp6413an.pdf 
NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 28 mW @ 10 V 42 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒
0.1. Size:113K onsemi
ntb6413ang ntp6413ang.pdf 
NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 28 mW @ 10 V 42 A Qualified and PPAP Capable The... See More ⇒
8.1. Size:138K onsemi
ntb6412ang ntp6412ang.pdf 
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒
8.2. Size:138K onsemi
ntb6410ang ntp6410ang.pdf 
NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Chan... See More ⇒
8.3. Size:144K onsemi
ntb6410an ntp6410an.pdf 
NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒
8.4. Size:111K onsemi
ntb6411n ntp6411n.pdf 
NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 14 mW @ 10 V 77 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒
8.5. Size:271K onsemi
ntb6412an ntp6412an nvb6412an.pdf 
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th... See More ⇒
8.6. Size:81K onsemi
ntb6410an ntp6410an nvb6410an.pdf 
NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features www.onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Channel... See More ⇒
8.7. Size:139K onsemi
ntb6412an ntp6412an.pdf 
NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 18.2 mW @ 10 V 58 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channe... See More ⇒
8.8. Size:131K onsemi
ntb6411ang nvb6411an.pdf 
NTB6411AN, NTP6411AN, NVB6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 14 mW @ 10 V 77 A Qualified and PPAP Capable The... See More ⇒
Detailed specifications: NTB5404N
, NTB5405N
, NTB5426N
, NTB5605P
, NTB60N06
, NTB6410AN
, NTB6411AN
, NTB6412AN
, STP75NF75
, NTD110N02R
, NTD14N03R
, NTD18N06L
, NTD20N03L27
, NTD20N06
, NTD20N06L
, NTD20P06L
, NTD24N06
.
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.