NTB6413AN
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB6413AN
Marking Code: 6413AN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 51
nC
trⓘ - Rise Time: 84
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
D2PAK
NTB6413AN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB6413AN
Datasheet (PDF)
..1. Size:132K onsemi
ntb6413an ntp6413an nvb6413an.pdf 
NTB6413AN, NTP6413AN,NVB6413ANMOSFET Power,N-Channel100 V, 42 A, 28 mWwww.onsemi.comFeatures Low RDS(on)ID MAX High Current CapabilityV(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-C
..2. Size:143K onsemi
ntb6413an ntp6413an.pdf
NTB6413AN, NTP6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 28 mW @ 10 V 42 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
0.1. Size:113K onsemi
ntb6413ang ntp6413ang.pdf
NTB6413AN, NTP6413AN,NVB6413ANN-Channel Power MOSFET100 V, 42 A, 28 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 28 mW @ 10 V 42 AQualified and PPAP Capable The
8.1. Size:138K onsemi
ntb6412ang ntp6412ang.pdf
NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable
8.2. Size:138K onsemi
ntb6410ang ntp6410ang.pdf
NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Chan
8.3. Size:144K onsemi
ntb6410an ntp6410an.pdf
NTB6410AN, NTP6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 13 mW @ 10 V 76 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
8.4. Size:111K onsemi
ntb6411n ntp6411n.pdf
NTB6411AN, NTP6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 14 mW @ 10 V 77 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-ChannelG
8.5. Size:271K onsemi
ntb6412an ntp6412an nvb6412an.pdf
NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th
8.6. Size:81K onsemi
ntb6410an ntp6410an nvb6410an.pdf
NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel
8.7. Size:139K onsemi
ntb6412an ntp6412an.pdf
NTB6412AN, NTP6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)100 V 18.2 mW @ 10 V 58 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 100 VN-Channe
8.8. Size:131K onsemi
ntb6411ang nvb6411an.pdf
NTB6411AN, NTP6411AN,NVB6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 14 mW @ 10 V 77 AQualified and PPAP Capable The
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