NTD18N06L Specs and Replacement
Type Designator: NTD18N06L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: DPAK
NTD18N06L substitution
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NTD18N06L datasheet
ntd18n06l ntdv18n06l.pdf
NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1) T... See More ⇒
ntd18n06l.pdf
isc N-Channel MOSFET Transistor NTD18N06L FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
ntd18n06lg ntdv18n06lt4g.pdf
NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1)... See More ⇒
Detailed specifications: NTB5605P, NTB60N06, NTB6410AN, NTB6411AN, NTB6412AN, NTB6413AN, NTD110N02R, NTD14N03R, IRF4905, NTD20N03L27, NTD20N06, NTD20N06L, NTD20P06L, NTD24N06, NTD24N06L, NTD25P03L, NTD2955
Keywords - NTD18N06L MOSFET specs
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